MXSMBJ10AE3 vs SMBJ10A-E3/5B feature comparison

MXSMBJ10AE3 Microchip Technology Inc

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SMBJ10A-E3/5B Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC VISHAY SEMICONDUCTORS
Package Description SMBJ, 2 PIN R-PDSO-C2
Reach Compliance Code not_compliant unknown
Breakdown Voltage-Max 12.3 V 12.3 V
Breakdown Voltage-Min 11.1 V 11.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 5 W
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 30
Base Number Matches 2 2
Pbfree Code Yes
Part Package Code DO-214AA
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Nom 11.7 V
Clamping Voltage-Max 17 V
Forward Voltage-Max (VF) 3.5 V
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Reverse Test Voltage 10 V

Compare MXSMBJ10AE3 with alternatives

Compare SMBJ10A-E3/5B with alternatives