MXSMLJ45CAE3 vs MXSMLJ45CATR feature comparison

MXSMLJ45CAE3 Microchip Technology Inc

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MXSMLJ45CATR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY TR, 7 INCH: 750
Breakdown Voltage-Max 55.3 V 55.3 V
Breakdown Voltage-Min 50 V 50 V
Breakdown Voltage-Nom 52.65 V 52.65 V
Clamping Voltage-Max 72.7 V 72.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.61 W 1.61 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 45 V 45 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 3
Pbfree Code No
Part Package Code DO-214AB
Package Description R-PDSO-C2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50

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