N82S135NB
vs
6309-1JXXXX
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SIGNETICS CORP
|
MONOLITHIC MEMORIES
|
| Package Description |
DIP, DIP20,.3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8542.32.00.71
|
|
| Access Time-Max |
45 ns
|
450 ns
|
| JESD-30 Code |
R-PDIP-T20
|
R-GDIP-T20
|
| JESD-609 Code |
e0
|
|
| Memory Density |
2048 bit
|
524288 bit
|
| Memory IC Type |
OTP ROM
|
OTP ROM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
20
|
20
|
| Number of Words |
256 words
|
256 words
|
| Number of Words Code |
256
|
64000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
75 °C
|
75 °C
|
| Operating Temperature-Min |
|
|
| Organization |
256X8
|
64KX8
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
|
| Package Equivalence Code |
DIP20,.3
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Current-Max |
0.15 mA
|
0.075 mA
|
| Supply Voltage-Max (Vsup) |
5.25 V
|
|
| Supply Voltage-Min (Vsup) |
4.75 V
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
BIPOLAR
|
CMOS
|
| Temperature Grade |
COMMERCIAL EXTENDED
|
COMMERCIAL EXTENDED
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare N82S135NB with alternatives
Compare 6309-1JXXXX with alternatives