N82S16N vs MM54C200N feature comparison

N82S16N NXP Semiconductors

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MM54C200N Texas Instruments

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SIGNETICS CORP NATIONAL SEMICONDUCTOR CORP
Package Description DIP, DIP16,.3 DIP,
Reach Compliance Code unknown unknown
ECCN Code EAR99 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 50 ns 1200 ns
JESD-30 Code R-PDIP-T16 R-XDIP-T16
JESD-609 Code e0
Memory Density 256 bit 256 bit
Memory IC Type CACHE SRAM STANDARD SRAM
Memory Width 1 1
Number of Functions 1 1
Number of Ports 1
Number of Terminals 16 16
Number of Words 256 words 256 words
Number of Words Code 256 256
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 75 °C 125 °C
Operating Temperature-Min -55 °C
Organization 256X1 256X1
Output Characteristics 3-STATE
Output Enable NO
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIP DIP
Package Equivalence Code DIP16,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified
Supply Current-Max 0.115 mA
Supply Voltage-Max (Vsup) 5.25 V 15 V
Supply Voltage-Min (Vsup) 4.75 V 3 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology TTL CMOS
Temperature Grade COMMERCIAL EXTENDED MILITARY
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 4 2
Length 19.305 mm
Seated Height-Max 5.08 mm
Width 7.62 mm

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Compare MM54C200N with alternatives