NAND01GW3B2BZA1 vs S34ML01G200TFB000 feature comparison

NAND01GW3B2BZA1 STMicroelectronics

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S34ML01G200TFB000 Cypress Semiconductor

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Source Content uid NAND01GW3B2BZA1
Rohs Code No Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer STMICROELECTRONICS CYPRESS SEMICONDUCTOR CORP
Part Package Code BGA
Package Description TFBGA, TSOP1-48
Pin Count 63
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 35 ns
JESD-30 Code R-PBGA-B63 R-PDSO-G48
JESD-609 Code e0 e3
Length 12 mm 18.4 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 63 48
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 105 °C
Operating Temperature-Min -40 °C
Organization 128MX8 128MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TSOP1
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 3 V 3 V
Qualification Status Not Qualified
Seated Height-Max 1.05 mm 1.2 mm
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Finish TIN LEAD MATTE TIN
Terminal Form BALL GULL WING
Terminal Pitch 0.8 mm 0.5 mm
Terminal Position BOTTOM DUAL
Width 9.5 mm 12 mm
Base Number Matches 3 2
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260
Screening Level AEC-Q100
Type SLC NAND TYPE

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