NDS8926/L86Z
vs
SVN66AK
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
SOLITRON DEVICES INC
|
| Package Description |
SMALL OUTLINE, R-PDSO-G8
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
20 V
|
|
| Drain Current-Max (ID) |
5.5 A
|
2 A
|
| Drain-source On Resistance-Max |
0.035 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G8
|
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
8
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
2 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Part Package Code |
|
DIE
|
| Case Connection |
|
ISOLATED
|
| JESD-609 Code |
|
e0
|
| Power Dissipation-Max (Abs) |
|
8.3 W
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare NDS8926/L86Z with alternatives
Compare SVN66AK with alternatives