NJVMJD44H11T4G-VF01 vs MJD44H11-T1 feature comparison

NJVMJD44H11T4G-VF01 onsemi

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MJD44H11-T1 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ONSEMI SAMSUNG SEMICONDUCTOR INC
Package Description DPAK-3/2 SMALL OUTLINE, R-PSSO-G2
Manufacturer Package Code 369C
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 61 Weeks
Date Of Intro 2017-02-07
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 8 A 8 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 40
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 85 MHz 50 MHz
Base Number Matches 1 1
Pin Count 3
HTS Code 8541.29.00.75
Power Dissipation Ambient-Max 20 W
Qualification Status Not Qualified
VCEsat-Max 1 V

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