NRVB8H100MFSWFT1G
vs
MBR8H100MFST3G
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
End Of Life
|
| Ihs Manufacturer |
ONSEMI
|
ONSEMI
|
| Package Description |
SO-8FL, DFN6, 6 PIN
|
SO-8FL, DFN6, 6 PIN
|
| Manufacturer Package Code |
507BA
|
488AA
|
| Reach Compliance Code |
not_compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Factory Lead Time |
77 Weeks
|
|
| Samacsys Manufacturer |
onsemi
|
onsemi
|
| Additional Feature |
LOW POWER LOSS
|
LOW POWER LOSS
|
| Application |
EFFICIENCY
|
EFFICIENCY
|
| Case Connection |
CATHODE
|
CATHODE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.9 V
|
0.9 V
|
| JESD-30 Code |
R-PDSO-F5
|
R-PDSO-F5
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Pk Forward Current-Max |
75 A
|
75 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
5
|
5
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Output Current-Max |
8 A
|
8 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Reference Standard |
AEC-Q101
|
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Current-Max |
2 µA
|
2 µA
|
| Surface Mount |
YES
|
YES
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
MATTE TIN
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
DFN5 5X6, 1.27P (SO 8FL)
|
|
|
|
Compare NRVB8H100MFSWFT1G with alternatives
Compare MBR8H100MFST3G with alternatives