NRVS2M vs US2M feature comparison

NRVS2M onsemi

Buy Now Datasheet

US2M Galaxy Microelectronics

Buy Now Datasheet
Pbfree Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ONSEMI CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Manufacturer Package Code 403AF
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Factory Lead Time 28 Weeks
Date Of Intro 2020-04-08
Samacsys Manufacturer onsemi
Application GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.15 V 1.7 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 2 A 2 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Power Dissipation-Max 2.35 W
Reference Standard AEC-Q101; UL CERTIFIED
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 2 µs 0.075 µs
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 4
Rohs Code Yes

Compare NRVS2M with alternatives

Compare US2M with alternatives