NST65010MW6T1G
vs
NSVT65010MMR6T1G
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ONSEMI
|
ON SEMICONDUCTOR
|
| Manufacturer Package Code |
419B-02
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Base Capacitance-Max |
4.5 pF
|
|
| Collector-Emitter Voltage-Max |
65 V
|
65 V
|
| Configuration |
SEPARATE, 2 ELEMENTS
|
SEPARATE, 2 ELEMENTS
|
| DC Current Gain-Min (hFE) |
220
|
220
|
| JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G6
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
6
|
6
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
0.38 W
|
0.38 W
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| VCEsat-Max |
0.65 V
|
0.65 V
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G6
|
| Reference Standard |
|
AEC-Q101
|
|
|
|
Compare NST65010MW6T1G with alternatives
Compare NSVT65010MMR6T1G with alternatives