NTD110N02RT4G vs SUD50N02-06P-E3 feature comparison

NTD110N02RT4G onsemi

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SUD50N02-06P-E3 Vishay Siliconix

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Pbfree Code Yes Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer ONSEMI VISHAY SILICONIX
Part Package Code DPAK 4 LEAD Single Gauge Surface Mount TO-252
Package Description DPAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 4 4
Manufacturer Package Code 369AA
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi Vishay
Avalanche Energy Rating (Eas) 120 mJ 101 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 24 V 20 V
Drain Current-Max (ID) 12.5 A 26 A
Drain-source On Resistance-Max 0.0062 Ω 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 92.5 W 65 W
Pulsed Drain Current-Max (IDM) 110 A 100 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
JEDEC-95 Code TO-252

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