NTE350
vs
SD1214-12
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
NTE ELECTRONICS INC
|
MICROSEMI CORP
|
Package Description |
FLANGE MOUNT, O-MRFM-F4
|
POST/STUD MOUNT, O-XRPM-F4
|
Pin Count |
4
|
4
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.75
|
|
Collector Current-Max (IC) |
2.5 A
|
2 A
|
Collector-Base Capacitance-Max |
85 pF
|
70 pF
|
Collector-Emitter Voltage-Max |
18 V
|
18 V
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN RESISTOR
|
DC Current Gain-Min (hFE) |
5
|
|
Highest Frequency Band |
VERY HIGH FREQUENCY BAND
|
VERY HIGH FREQUENCY BAND
|
JESD-30 Code |
O-MRFM-F4
|
O-XRPM-F4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Package Body Material |
METAL
|
UNSPECIFIED
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
FLANGE MOUNT
|
POST/STUD MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
NPN
|
NPN
|
Power Dissipation Ambient-Max |
31 W
|
|
Power Dissipation-Max (Abs) |
31 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
RADIAL
|
RADIAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
No
|
Additional Feature |
|
HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
200 °C
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare NTE350 with alternatives
Compare SD1214-12 with alternatives