NTP13N10 vs NTP52N10 feature comparison

NTP13N10 Rochester Electronics LLC

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NTP52N10 onsemi

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Pbfree Code Yes
Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ON SEMICONDUCTOR
Part Package Code TO-220AB TO-220AB
Package Description CASE 221A-09, 3 PIN FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Manufacturer Package Code CASE 221A-09 CASE 221A-09
Reach Compliance Code unknown not_compliant
Avalanche Energy Rating (Eas) 85 mJ 800 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 13 A 60 A
Drain-source On Resistance-Max 0.165 Ω 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 240 235
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 39 A 156 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn80Pb20)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer onsemi
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 178 W

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