NTR1P02LT1G vs NDS356P feature comparison

NTR1P02LT1G Rochester Electronics LLC

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NDS356P National Semiconductor Corporation

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Pbfree Code No
Rohs Code Yes No
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC NATIONAL SEMICONDUCTOR CORP
Part Package Code SOT-23
Package Description HALOGEN FREE AND LEAD FREE, MINIATURE, CASE 318-08, 3 PIN
Pin Count 3
Manufacturer Package Code CASE 318-08
Reach Compliance Code unknown compliant
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 1.3 A 1.1 A
Drain-source On Resistance-Max 0.22 Ω 0.21 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236 TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
Additional Feature LOGIC LEVEL COMPATIBLE
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 0.46 W
Power Dissipation-Max (Abs) 0.5 W

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