NTTFS4985NFTWG
vs
BSF045N03MQ3G
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
ONSEMI
|
INFINEON TECHNOLOGIES AG
|
Part Package Code |
DFN
|
|
Package Description |
3.30 X 3.30 MM, ROHS COMPLIANT, CASE 511AB, WDFN-8
|
CHIP CARRIER, R-MBCC-N2
|
Pin Count |
8
|
2
|
Manufacturer Package Code |
CASE 511AB
|
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
4 Weeks
|
|
Avalanche Energy Rating (Eas) |
52 mJ
|
30 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
16.3 A
|
18 A
|
Drain-source On Resistance-Max |
0.0052 Ω
|
0.0059 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-F5
|
R-MBCC-N2
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
5
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
METAL
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
22.73 W
|
28 W
|
Pulsed Drain Current-Max (IDM) |
192 A
|
252 A
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
FLAT
|
NO LEAD
|
Terminal Position |
DUAL
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare NTTFS4985NFTWG with alternatives
Compare BSF045N03MQ3G with alternatives