NVHL080N120SC1 vs MSC080SMA120S feature comparison

NVHL080N120SC1 onsemi

Buy Now Datasheet

MSC080SMA120S Microsemi Corporation

Buy Now Datasheet
Source Content uid NVHL080N120SC1
Pbfree Code Yes
Part Life Cycle Code Not Recommended Transferred
Ihs Manufacturer ON SEMICONDUCTOR MICROSEMI CORP
Package Description FLANGE MOUNT, R-PSFM-T3 TO-268, D3PAK-3/2
Manufacturer Package Code 340CX
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Date Of Intro 2018-12-03 2020-01-29
Avalanche Energy Rating (Eas) 171 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V 1200 V
Drain Current-Max (Abs) (ID) 44 A 35 A
Drain Current-Max (ID) 44 A 35 A
Drain-source On Resistance-Max 0.11 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JEDEC-95 Code TO-247 TO-268AA
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 348 W 182 W
Pulsed Drain Current-Max (IDM) 136 A 87 A
Reference Standard AEC-Q101
Surface Mount NO YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON CARBIDE SILICON CARBIDE
Turn-off Time-Max (toff) 61 ns
Turn-on Time-Max (ton) 25 ns
Base Number Matches 1 2
Rohs Code Yes

Compare NVHL080N120SC1 with alternatives