P4KE120A vs P4KE120A feature comparison

P4KE120A Sangdest Microelectronics (Nanjing) Co Ltd

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P4KE120A International Semiconductor Inc

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD INTERNATIONAL SEMICONDUCTOR INC
Package Description PLASTIC PACKAGE-2
Reach Compliance Code compliant unknown
Breakdown Voltage-Max 126 V 126 V
Breakdown Voltage-Min 114 V 114 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 102 V 102 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 5 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature LOW IMPEDANCE
Breakdown Voltage-Nom 120 V
Clamping Voltage-Max 165 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 5 µA

Compare P4KE120A with alternatives

Compare P4KE120A with alternatives