P4KE350C vs BZW06-28BB0G feature comparison

P4KE350C Sangdest Microelectronics (Nanjing) Co Ltd

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BZW06-28BB0G Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description PLASTIC PACKAGE-2 O-PALF-W2
Reach Compliance Code compliant compliant
Breakdown Voltage-Max 385 V 34.7 V
Breakdown Voltage-Min 315 V 31.4 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AC
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1.7 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 284 V 28.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
JESD-609 Code e3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Terminal Finish MATTE TIN

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