P4KE350CA vs BZW04-299BB0 feature comparison

P4KE350CA MDE Semiconductor Inc

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BZW04-299BB0 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MDE SEMICONDUCTOR INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 368 V 368 V
Breakdown Voltage-Min 332 V 332 V
Breakdown Voltage-Nom 350 V 350 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 482 V 482 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard MIL-STD-750, UL LISTED
Rep Pk Reverse Voltage-Max 300 V 299 V
Reverse Current-Max 5 µA
Reverse Test Voltage 300 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 54 1
Package Description O-PALF-W2
JESD-609 Code e3
Terminal Finish MATTE TIN

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