P4KE75CA vs P4KE75CA-GT3 feature comparison

P4KE75CA Galaxy Microelectronics

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P4KE75CA-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
Breakdown Voltage-Nom 75.05 V
Clamping Voltage-Max 103 V
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 64.1 V 64.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Base Number Matches 55 2
Package Description O-PALF-W2
Breakdown Voltage-Max 78.8 V
Breakdown Voltage-Min 71.3 V
Case Connection ISOLATED
Configuration SINGLE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 1 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Terminal Form WIRE
Terminal Position AXIAL

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