P4SMA10CAHE3_A/H vs SMAJP4KE10CAE3TR feature comparison

P4SMA10CAHE3_A/H Vishay Intertechnologies

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SMAJP4KE10CAE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 8 Weeks
Additional Feature EXCELLENT CLAMPING CAPABILITY TR, 7 INCH; 750
Breakdown Voltage-Max 10.5 V 10.5 V
Breakdown Voltage-Min 9.5 V 9.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3.3 W 1.52 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 8.55 V 8.55 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 5
Part Package Code DO-214AC
Package Description R-PDSO-C2
Pin Count 2

Compare P4SMA10CAHE3_A/H with alternatives

Compare SMAJP4KE10CAE3TR with alternatives