P4SMA18AE3G vs P4SMA18A_R1_10001 feature comparison

P4SMA18AE3G Taiwan Semiconductor

Buy Now Datasheet

P4SMA18A_R1_10001 PanJit Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 18.9 V 18.9 V
Breakdown Voltage-Min 17.1 V 17.1 V
Breakdown Voltage-Nom 18 V 18 V
Clamping Voltage-Max 25.5 V 25.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 15.3 V 15.3 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 1
Pbfree Code Yes

Compare P4SMA18AE3G with alternatives

Compare P4SMA18A_R1_10001 with alternatives