P4SMA200A-M3/5A vs MQSMAJP4KE200AE3 feature comparison

P4SMA200A-M3/5A Vishay Intertechnologies

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MQSMAJP4KE200AE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code not_compliant unknown
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 210 V 210 V
Breakdown Voltage-Min 190 V 190 V
Breakdown Voltage-Nom 200 V
Clamping Voltage-Max 274 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 300 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3.3 W 1.52 W
Rep Pk Reverse Voltage-Max 171 V 171 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 2
Part Package Code DO-214AC
Package Description R-PDSO-C2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Qualification Status Not Qualified

Compare P4SMA200A-M3/5A with alternatives

Compare MQSMAJP4KE200AE3 with alternatives