P4SMA33CA-AU_R1_000A1
vs
P4SMA33CF2
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PANJIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
34.7 V
36.3 V
Breakdown Voltage-Min
31.4 V
29.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Reference Standard
AEC-Q101; ISO 10605
Rep Pk Reverse Voltage-Max
28.2 V
26.8 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Base Number Matches
1
2
Package Description
R-PDSO-C2
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom
33 V
Clamping Voltage-Max
47.7 V
JEDEC-95 Code
DO-214AC
JESD-609 Code
e3
Moisture Sensitivity Level
1
Terminal Finish
MATTE TIN
Compare P4SMA33CA-AU_R1_000A1 with alternatives
Compare P4SMA33CF2 with alternatives