P4SMAJ10 vs SMAJ10E3 feature comparison

P4SMAJ10 Dean Technology

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SMAJ10E3 Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer DEAN TECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Package Description SMA, 2 PIN R-PDSO-C2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 14.1 V 13.6 V
Breakdown Voltage-Min 11.1 V 11.1 V
Breakdown Voltage-Nom 12.6 V 12.35 V
Clamping Voltage-Max 18.8 V 18.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 400 W 1 W
Rep Pk Reverse Voltage-Max 10 V 10 V
Reverse Current-Max 5 µA
Reverse Test Voltage 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 11 2
Rohs Code Yes
Additional Feature EXCELLENT CLAMPING CAPABILITY
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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