P6KE100A vs P6KE100C feature comparison

P6KE100A EIC Semiconductor Inc

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P6KE100C Galaxy Microelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 105 V 110 V
Breakdown Voltage-Min 95 V 90 V
Breakdown Voltage-Nom 100 V 100 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 137 V 144 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -50 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Rep Pk Reverse Voltage-Max 85.5 V 81 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
Package Description PLASTIC PACKAGE-2
Peak Reflow Temperature (Cel) 260

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