P6KE12 vs P6KE12A feature comparison

P6KE12 TDK Micronas GmbH

Buy Now Datasheet

P6KE12A Formosa Microsemi Co Ltd

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ITT SEMICONDUCTOR FORMOSA MICROSEMI CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 13.2 V 12.6 V
Breakdown Voltage-Min 10.8 V 11.4 V
Breakdown Voltage-Nom 12 V 12 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 17.3 V 16.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 2
Rohs Code Yes
Additional Feature EXCELLENT CLAMPING CAPABILITY
JEDEC-95 Code DO-15
Non-rep Peak Rev Power Dis-Max 600 W
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 5 W
Rep Pk Reverse Voltage-Max 10.2 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare P6KE12 with alternatives

Compare P6KE12A with alternatives