P6KE18 vs P6KE18 feature comparison

P6KE18 Galaxy Microelectronics

Buy Now Datasheet

P6KE18 Dean Technology

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD DEAN TECHNOLOGY INC
Part Package Code DO-15
Reach Compliance Code unknown unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 19.8 V 19.8 V
Breakdown Voltage-Min 16.2 V 16.2 V
Breakdown Voltage-Nom 18 V 18 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 26.5 V 26.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -50 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Rep Pk Reverse Voltage-Max 14.5 V 14.5 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 8 4
ECCN Code EAR99
HTS Code 8541.10.00.50
Reverse Current-Max 5 µA
Reverse Test Voltage 14.5 V

Compare P6KE18 with alternatives

Compare P6KE18 with alternatives