P6KE200ACOX.200 vs P6KE200-G feature comparison

P6KE200ACOX.200 Microsemi Corporation

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P6KE200-G Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 200 V
Clamping Voltage-Max 274 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-MEDB-N2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material METAL PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style DISK BUTTON LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 171 V 162 V
Reverse Current-Max 5 µA
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Form NO LEAD WIRE
Terminal Position END AXIAL
Base Number Matches 1 4
Rohs Code Yes
Package Description O-PALF-W2
Breakdown Voltage-Max 220 V
Breakdown Voltage-Min 180 V
Case Connection ISOLATED
JEDEC-95 Code DO-15
Moisture Sensitivity Level 1
Power Dissipation-Max 5 W
Reference Standard UL RECOGNIZED

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