P6KE33A vs P6KE33AR0G feature comparison

P6KE33A TDK Micronas GmbH

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P6KE33AR0G Taiwan Semiconductor

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer ITT SEMICONDUCTOR TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 34.7 V 34.7 V
Breakdown Voltage-Min 31.4 V 31.4 V
Breakdown Voltage-Nom 33 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 45.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Rohs Code Yes
Package Description DO-15, 2 PIN
Additional Feature EXCELLENT CLAMPING CAPABILITY
JEDEC-95 Code DO-204AC
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600 W
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 5 W
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 28.2 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

Compare P6KE33A with alternatives

Compare P6KE33AR0G with alternatives