P6KE39A vs P6KE39R0G feature comparison

P6KE39A Comchip Technology Corporation Ltd

Buy Now Datasheet

P6KE39R0G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 41 V 42.9 V
Breakdown Voltage-Min 37.1 V 35.1 V
Breakdown Voltage-Nom 39.05 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 53.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-15 DO-204AC
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Reference Standard MIL-STD-202 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 33.3 V 31.6 V
Reverse Current-Max 5 µA
Reverse Test Voltage 33.3 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 1
Package Description O-PALF-W2
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

Compare P6KE39A with alternatives

Compare P6KE39R0G with alternatives