P6KE39A vs P6KE39A feature comparison

P6KE39A EIC Semiconductor Inc

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P6KE39A TDK Micronas GmbH

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD ITT SEMICONDUCTOR
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max 41 V 41 V
Breakdown Voltage-Min 37.1 V 37.1 V
Breakdown Voltage-Nom 39 V 39 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 53.9 V 53.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Rep Pk Reverse Voltage-Max 33.3 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Qualification Status Not Qualified
Reverse Current-Max 5 µA

Compare P6KE39A with alternatives

Compare P6KE39A with alternatives