P6KE39A vs P6KE39HB0 feature comparison

P6KE39A TDK Micronas GmbH

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P6KE39HB0 Taiwan Semiconductor

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer ITT SEMICONDUCTOR TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 41 V 42.9 V
Breakdown Voltage-Min 37.1 V 35.1 V
Breakdown Voltage-Nom 39 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 53.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 2
Rohs Code Yes
Package Description O-PALF-W2
Additional Feature EXCELLENT CLAMPING CAPABILITY
JEDEC-95 Code DO-204AC
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600 W
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 5 W
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 31.6 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

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