P6KE47ATR vs P6KE47E3 feature comparison

P6KE47ATR MDE Semiconductor Inc

Buy Now Datasheet

P6KE47E3 Microsemi Corporation

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Base Number Matches 4 1
Pbfree Code Yes
Rohs Code Yes
Package Description O-PALF-W2
Pin Count 2
Breakdown Voltage-Max 51.7 V
Breakdown Voltage-Min 42.3 V
Breakdown Voltage-Nom 47 V
Case Connection ISOLATED
Clamping Voltage-Max 67.8 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 38.1 V
Surface Mount NO
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL

Compare P6KE47E3 with alternatives