P6KE51CA-GT3 vs P6KE51CAE3 feature comparison

P6KE51CA-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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P6KE51CAE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 53.6 V 53.6 V
Breakdown Voltage-Min 48.5 V 48.5 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 43.6 V 43.6 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Pbfree Code Yes
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 51 V
Clamping Voltage-Max 70.1 V
JESD-609 Code e3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Terminal Finish MATTE TIN

Compare P6KE51CA-GT3 with alternatives

Compare P6KE51CAE3 with alternatives