P6KE51P vs MX1N6287E3TR feature comparison

P6KE51P STMicroelectronics

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MX1N6287E3TR Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS MICROSEMI CORP
Package Description O-PALF-W2 O-PALF-W2
Pin Count 2 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 56.1 V 51.7 V
Breakdown Voltage-Min 48.5 V 42.3 V
Breakdown Voltage-Nom 51 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 91 V
Configuration SINGLE SINGLE
Diode Capacitance-Min 750 pF
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1.52 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 44 V 38.1 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Manufacturer Package Code CASE 1
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -65 °C
Terminal Finish MATTE TIN

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Compare MX1N6287E3TR with alternatives