P6KE62AHE3/54 vs P6KE62 feature comparison

P6KE62AHE3/54 New Jersey Semiconductor Products Inc

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P6KE62 Galaxy Semi-Conductor Co Ltd

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Part Life Cycle Code Active Active
Ihs Manufacturer NEW JERSEY SEMICONDUCTOR PRODUCTS INC GALAXY SEMI-CONDUCTOR CO LTD
Package Description DO-15, 2 PIN O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 65.1 V 68.2 V
Breakdown Voltage-Min 58.9 V 55.8 V
Breakdown Voltage-Nom 62 V 62.3 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 85 V 89 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-204AC DO-15
JESD-30 Code O-XALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -50 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 53 V 50.2 V
Reverse Current-Max 1 µA
Reverse Test Voltage 53 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 70
Rohs Code Yes
Part Package Code DO-15
Pin Count 2
Peak Reflow Temperature (Cel) 260

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Compare P6KE62 with alternatives