P6KE8.2A vs P6KE8.2AR0 feature comparison

P6KE8.2A EIC Semiconductor Inc

Buy Now Datasheet

P6KE8.2AR0 Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 8.61 V 8.61 V
Breakdown Voltage-Min 7.79 V 7.79 V
Breakdown Voltage-Nom 8.2 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 12.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-204AC
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Rep Pk Reverse Voltage-Max 7.02 V 7.02 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 4
Package Description DO-15, 2 PIN
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Reference Standard UL RECOGNIZED
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

Compare P6KE8.2A with alternatives

Compare P6KE8.2AR0 with alternatives