P6SMB11A-E3/5B vs 1N6461 feature comparison

P6SMB11A-E3/5B Vishay Semiconductors

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1N6461 Microsemi Corporation

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Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Active Transferred
Ihs Manufacturer VISHAY SEMICONDUCTORS MICROSEMI CORP
Part Package Code DO-214AA
Package Description R-PDSO-C2 HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 11.6 V
Breakdown Voltage-Min 10.5 V
Breakdown Voltage-Nom 11.05 V
Clamping Voltage-Max 15.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V 1 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 O-LALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY GLASS
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 9.4 V 300 V
Reverse Current-Max 5 µA
Reverse Test Voltage 9.4 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) TIN LEAD
Terminal Form C BEND WIRE
Terminal Position DUAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 9
Case Connection ISOLATED
Non-rep Pk Forward Current-Max 3 A
Output Current-Max 0.15 A

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