P6SMB11ATR13 vs SMBJ11-GT3 feature comparison

P6SMB11ATR13 Central Semiconductor Corp

Buy Now Datasheet

SMBJ11-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 11.6 V 15.4 V
Breakdown Voltage-Min 10.5 V 12.2 V
Breakdown Voltage-Nom 11 V
Clamping Voltage-Max 15.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 9.4 V 11 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2
Package Description R-PDSO-C2
JEDEC-95 Code DO-214AA
Moisture Sensitivity Level 1
Reference Standard UL RECOGNIZED

Compare P6SMB11ATR13 with alternatives

Compare SMBJ11-GT3 with alternatives