P6SMB12A-H vs P6SMB12ATIN/LEAD feature comparison

P6SMB12A-H Bourns Inc

Buy Now Datasheet

P6SMB12ATIN/LEAD Central Semiconductor Corp

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer BOURNS INC CENTRAL SEMICONDUCTOR CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Bourns
Breakdown Voltage-Max 12.6 V 12.6 V
Breakdown Voltage-Min 11.4 V 11.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-5
Rep Pk Reverse Voltage-Max 10.2 V 10.2 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
Breakdown Voltage-Nom 12 V
Reverse Current-Max 5 µA
Reverse Test Voltage 10.2 V

Compare P6SMB12A-H with alternatives

Compare P6SMB12ATIN/LEAD with alternatives