P6SMB13AHM3/H vs MXSMBJ10AE3 feature comparison

P6SMB13AHM3/H Vishay Intertechnologies

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MXSMBJ10AE3 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Peak Reflow Temperature (Cel) 260 260
Terminal Finish Matte Tin (Sn) MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30 10
Base Number Matches 1 2
Package Description SMBJ, 2 PIN
Breakdown Voltage-Max 12.3 V
Breakdown Voltage-Min 11.1 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1.38 W
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 10 V
Surface Mount YES
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL

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