P6SMB39CAHR5G vs SMBJ33CAE3TR feature comparison

P6SMB39CAHR5G Taiwan Semiconductor

Buy Now Datasheet

SMBJ33CAE3TR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROSEMI CORP
Package Description SMB, 2 PIN R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY TR, 7 INCH; 750
Breakdown Voltage-Max 41 V 40.6 V
Breakdown Voltage-Min 37.1 V 36.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 1.38 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 33.3 V 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Part Package Code DO-214AA
Pin Count 2
Breakdown Voltage-Nom 38.65 V
Clamping Voltage-Max 53.3 V
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 10

Compare P6SMB39CAHR5G with alternatives

Compare SMBJ33CAE3TR with alternatives