P6SMB6.8A
vs
SMBJP6KE6.8AE3
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Part Package Code |
SMB
|
|
| Manufacturer Package Code |
SMB
|
|
| Base Number Matches |
30
|
1
|
| Ihs Manufacturer |
|
MICROSEMI CORP
|
| Package Description |
|
R-PDSO-C2
|
| Reach Compliance Code |
|
compliant
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Breakdown Voltage-Max |
|
7.14 V
|
| Breakdown Voltage-Min |
|
6.45 V
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| Diode Type |
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
|
DO-214AA
|
| JESD-30 Code |
|
R-PDSO-C2
|
| Non-rep Peak Rev Power Dis-Max |
|
600 W
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity |
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
|
1.38 W
|
| Rep Pk Reverse Voltage-Max |
|
5.8 V
|
| Surface Mount |
|
YES
|
| Technology |
|
AVALANCHE
|
| Terminal Form |
|
C BEND
|
| Terminal Position |
|
DUAL
|
|
|
|
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