P6SMB7.5CAHR4 vs MSMBJ6.5CA/TR feature comparison

P6SMB7.5CAHR4 Taiwan Semiconductor

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MSMBJ6.5CA/TR Microchip Technology Inc

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Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROCHIP TECHNOLOGY INC
Package Description R-PDSO-C2 PLASTIC, SMBJ, 2 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY HIGH RELIABILITY
Breakdown Voltage-Max 7.88 V 7.98 V
Breakdown Voltage-Min 7.13 V 7.22 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 1.38 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 6.4 V 6.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 1
Breakdown Voltage-Nom 7.6 V
Clamping Voltage-Max 11.2 V
Qualification Status Not Qualified

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Compare MSMBJ6.5CA/TR with alternatives