P6SMB75_R1_10001 vs P6SMB75A-E3/5B feature comparison

P6SMB75_R1_10001 PanJit Semiconductor

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P6SMB75A-E3/5B Vishay Intertechnologies

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC VISHAY INTERTECHNOLOGY INC
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 82.5 V 78.8 V
Breakdown Voltage-Min 67.5 V 71.3 V
Breakdown Voltage-Nom 100 V 75.05 V
Clamping Voltage-Max 144 V 103 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 81 V 64.1 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 2
Package Description SMB, 2 PIN
Factory Lead Time 10 Weeks
Additional Feature EXCELLENT CLAMPING CAPABILITY
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Reverse Current-Max 1 µA
Reverse Test Voltage 64.1 V
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL

Compare P6SMB75_R1_10001 with alternatives

Compare P6SMB75A-E3/5B with alternatives