P6SMBJ11-AU_R1_000A1 vs P6SMB11AT3G feature comparison

P6SMBJ11-AU_R1_000A1 PanJit Semiconductor

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P6SMB11AT3G onsemi

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC ON SEMICONDUCTOR
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 15.4 V 11.6 V
Breakdown Voltage-Min 12.2 V 10.5 V
Breakdown Voltage-Nom 13.8 V 11 V
Clamping Voltage-Max 20.1 V 15.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101; IEC-61000-4-2; TS 16949; UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 11 V 9.4 V
Surface Mount YES YES
Technology AVALANCHE ZENER
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Base Number Matches 1 1
Part Package Code DO-214
Pin Count 2
Manufacturer Package Code CASE 403A-03
Additional Feature HIGH RELIABILITY
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 0.55 W
Qualification Status Not Qualified
Terminal Finish Tin (Sn)

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