P6SMBJ11A vs SA6.0 feature comparison

P6SMBJ11A Cheng-Yi Electronic Co Ltd

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SA6.0 Galaxy Semi-Conductor Co Ltd

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer CHENG-YI ELECTRONIC CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Base Number Matches 11 47
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 8.15 V
Breakdown Voltage-Min 6.67 V
Breakdown Voltage-Nom 7.41 V
Case Connection ISOLATED
Clamping Voltage-Max 11.4 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2
Non-rep Peak Rev Power Dis-Max 500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard MIL-STD-750
Rep Pk Reverse Voltage-Max 6 V
Reverse Current-Max 600 µA
Reverse Test Voltage 6 V
Surface Mount NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL

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