P6SMBJ60C-T3 vs SMBJ60CAHR4 feature comparison

P6SMBJ60C-T3 Won-Top Electronics Co Ltd

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SMBJ60CAHR4 Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer WON-TOP ELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-214AA
Package Description PLASTIC, SMB, 2 PIN R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 81.5 V 73.7 V
Breakdown Voltage-Min 66.7 V 66.7 V
Breakdown Voltage-Nom 75.6 V
Clamping Voltage-Max 107 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Rep Pk Reverse Voltage-Max 60 V 60 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30

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Compare SMBJ60CAHR4 with alternatives