P6SMBJ75CA_R2_10001 vs SMBJP6KE75AE3 feature comparison

P6SMBJ75CA_R2_10001 PanJit Semiconductor

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SMBJP6KE75AE3 Microsemi Corporation

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC MICROSEMI CORP
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 14
Package Description R-PDSO-C2
Breakdown Voltage-Max 78.8 V
Breakdown Voltage-Min 71.3 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1.38 W
Rep Pk Reverse Voltage-Max 64.1 V
Surface Mount YES
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL

Compare P6SMBJ75CA_R2_10001 with alternatives

Compare SMBJP6KE75AE3 with alternatives